BF1201R 데이터 시트보기 (PDF) - Philips Electronics
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BF1201R Datasheet PDF : 16 Pages
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Philips Semiconductors
N-channel dual-gate PoLo MOS-FETs
Product specification
BF1201; BF1201R;
BF1201WR
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)DSS drain-source breakdown voltage
V(BR)G1-SS gate 1-source breakdown voltage
V(BR)G2-SS gate 2-source breakdown voltage
V(F)S-G1 forward source-gate 1 voltage
V(F)S-G2 forward source-gate 2 voltage
VG1-S(th) gate 1-source threshold voltage
VG2-S(th) gate 2-source threshold voltage
IDSX
drain-source current
IG1-SS
IG2-SS
gate 1 cut-off current
gate 2 cut-off current
Note
1. RG1 connects G1 to VGG = 5 V.
CONDITIONS
VG1-S = VG2-S = 0; ID = 10 µA
VG2-S = VDS = 0; IG1-S = 10 mA
VG1-S = VDS = 0; IG2-S = 10 mA
VG2-S = VDS = 0; IS-G1 = 10 mA
VG1-S = VDS = 0; IS-G2 = 10 mA
VG2-S = 4 V; VDS = 5 V; ID = 100 µA
VG1-S = VDS = 5 V; ID = 100 µA
VG2-S = 4 V; VDS = 5 V; RG1 = 62 kΩ;
note 1
VG2-S = VDS = 0; VG1-S = 5 V
VG1-S = VDS = 0; VG2-S = 4 V
MIN.
10
6
6
0.5
0.5
0.3
0.3
11
MAX. UNIT
−
V
−
V
−
V
1.5 V
1.5 V
1.0 V
1.2 V
19
mA
−
50
nA
−
20
nA
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS = 5 V; ID = 15 mA; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
yfs
Cig1-ss
Cig2-ss
Coss
Crss
F
Gtr
Xmod
forward transfer admittance pulsed; Tj = 25 °C
23
input capacitance at gate 1 f = 1 MHz
−
input capacitance at gate 2 f = 1 MHz
−
output capacitance
f = 1 MHz
−
reverse transfer capacitance f = 1 MHz
−
noise figure
f = 10.7 MHz; GS = 20 mS; BS = 0
−
power gain
f = 400 MHz; YS = YS opt
−
f = 800 MHz; YS = YS opt
−
f = 200 MHz; GS = 2 mS; BS = BS opt;
−
GL = 0.5 mS; BL = BL opt;
f = 400 MHz; GS = 2 mS; BS = BS opt;
−
GL = 1 mS; BL = BL opt;
f = 800 MHz; GS = 3.3 mS; BS = BS opt; −
GL = 1 mS; BL = BL opt;
cross-modulation
input level for k = 1%; fw = 50 MHz;
funw = 60 MHz; note 1
at 0 dB AGC
90
at 10 dB AGC
−
at 40 dB AGC
105
28
35
2.6 3.1
1.1 −
0.9 −
15
30
5
7
1
1.8
1.9 2.5
33.5 −
29
−
24
−
−
−
95
−
−
−
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
dBµV
dBµV
dBµV
Note
1. Measured in Fig.21 test circuit.
2000 Mar 29
4
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