2SB1424 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2SB1424

Silicon PNP transistor in a SOT-89 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SB1424

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current-Continuous

Collector Current -Continuous(Pulse)

Collector Power Dissipation

Junction Temperature

Storage Temperature Range



符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

Tj

Tstg

电性能参数 / Electrical Characteristics(Ta=25℃)

数值

Rating

-20

-20

-6.0

-3.0

-5.0

0.6

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA IE=0

VCEO IC=-1.0mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-50μA IC=0

Collector Cut-Off Current

ICBO VCB=-20V IE=0

Emitter Base Cut-Off Current

IEBO VEB=-5.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

Transition Frequency

Collector Output Capacitance

hFE VCE=-2.0V

VCE(sat)

fT

Cob

IC=-2.0A

VCE=-2.0V

f=100MHz

VCB=-10V

f=1.0MHz

IC=-0.1A

IB=-0.1A

IC=-0.5A

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-20

V

-20

V

-6.0

V

-0.1 μA

-0.1 μA

120

390

-0.5 V

240

MHz

35

pF

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