BAV70T 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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BAV70T

Surface Mount Fast Switching Diode

Galaxy Semi-Conductor 

Production specification

Surface Mount Fast Switching Diode

BAS16T/BAV70T/BAW56T/BAV99T

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX

Reverse breakdown voltage V(BR)R

Leakage current

IR

Forward voltage

VF

IR=100μA

VR=75V

VR=75V,Tj=150℃

VR=25V,Tj=150℃

VR=25V

IF=1.0mA

IF=10mA

IF=50mA

IF=150mA

85

2.0

100

60

30

0.715

0.855

1.0

1.25

Transition frequency

fT

VCE=5V, IC=10mA,f=100KHz

100

Typical total capacitance

CT

VR=0V,f=1MHz

1.5

Reverse recovery Time

trr

IF=IR=10mA,Irr=0.1*IR,RL=100Ω

4.0

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

UNIT

V

μA

μA

μA

nA

V

MHz

pF

ns

H002

Rev.A

www.gmesemi.com

2

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