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BFR540 데이터 시트보기 (PDF) - Philips Electronics
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BFR540
NPN 9 GHz wideband transistor
Philips Electronics
BFR540 Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN 9 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R
BE
= 0
open collector
up to T
s
= 70
°
C; note 1
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
R
th j-s
from junction to soldering point
see note 1
Note
1. T
s
is the temperature at the soldering point of the collector tab.
Product specification
BFR540
MIN.
−
−
−
−
−
−
65
−
MAX.
20
15
2.5
120
500
150
175
UNIT
V
V
V
mA
mW
°
C
°
C
THERMAL RESISTANCE
260 K/W
1999 Aug 23
3
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