13N60 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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13N60 Datasheet PDF : 8 Pages
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SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
TO-220AB
TO-220F
TO-220AB
TO-220F
Min. Typ. Max.
1.07
3.7
62.5
62.5
UNIT
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
OFF CHARACTERISTICS
V(BR)DSS
Drain to source breakdown voltage
ID = 1mA, VGS = 0V
600
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
ON CHARACTERISTICS
0.73
V
V/ºC
10
μA
100
100
nA
-100
RDS(ON)
Static drain to source on-state resistance
VGS(TH)
Gate threshold voltage
gfs
Forward transconductance
DYNAMIC CHARACTERISTICS
VGS = 10V, lD = 6.5A
VGS=VDS, ID=250μA
VDS=40V, ID=6.5A
0.24 0.26 Ω
2
4
V
16.3
S
CISS
COSS
Input capacitance
Output capacitance
VDS = 100V, VGS = 0V, f =1MHz
1325 1765
50
65
CRSS
COSS
COSS eff
QG
QGS
QGD
ESR
Reverse transfer capacitance
Output capacitance
Effective output capacitance
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Equivalent series resistance (G-S)
VDS = 380V, VGS = 0V, f =1MHz
VDS = 0 to 480V, VGS = 0V
VDD = 380V, VGS = 10V
ID = 6.5A, (Note1,2)
Drain open
3
5
pF
30
145
30.5 40
6.0
nC
9.5
2.8
Ω
SWITCHING CHARACTERISTICS
td(ON)
tr
td(OFF)
Turn-on delay time
Rise time
Turn-off delay time
VDD = 380V, VGS = 10V
ID = 6.5A, RG=4.7Ω (Note1,2)
14.5 39
10.5 31.5
ns
45 100
tf
Fall time
10 30
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