Philips Semiconductors
860 MHz, 18.5 dB gain power doubler
amplifier
Product specification
BGD812
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
CSO
d2
Vo
NF
Itot
composite second
79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz −
−
−67 dB
order distortion
112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz −
−
−60 dB
132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz −
−
−58 dB
112 chs; fm = 210 MHz;
Vo = 50.2 dBmV at 745 MHz; note 2
−
−
−57 dB
79 chs; fm = 210 MHz;
Vo = 47.3 dBmV at 547 MHz; note 3
−
−
−64 dB
second order distortion note 4
−
−
−71 dB
output voltage
dim = −60 dB; note 5
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
64
−
−
dBmV
48
−
−
dBmV
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
51
−
−
dBmV
noise figure
f = 50 MHz
−
−
5.5 dB
f = 550 MHz
−
−
5.5 dB
f = 750 MHz
−
−
6.5 dB
f = 870 MHz
−
−
7.5 dB
total current
consumption (DC)
note 6
380 395 410 mA
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
5. Measured according to DIN45004B: fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB; fr = 860.25 MHz;
Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz.
6. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Oct 30
4