BGD812 데이터 시트보기 (PDF) - Philips Electronics
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BGD812 Datasheet PDF : 12 Pages
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Philips Semiconductors
860 MHz, 18.5 dB gain power doubler
amplifier
Product specification
BGD812
handbook−,5h0alfpage
CTB
(dB)
−60
MLD351
52
(1)
Vo
(dBmV)
48
handboo−k,4h0alfpage
Xmod
(dB)
−50
MLD352
52
(1)
Vo
(dBmV)
48
−70
44
(2)
−80
(3)
40
(4)
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
−60
44
(2)
−70
(3)
40
(4)
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
handboo−k,5h0alfpage
CSO
(dB)
−60
−70
−80
MLD353
52
(1)
Vo
(dBmV)
48
(2)
44
(3)
40
−90
0
(4)
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Oct 30
5
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