MPSW10 데이터 시트보기 (PDF) - Motorola => Freescale

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MPSW10

One Watt High Voltage Transistor

Motorola => Freescale 

MPSW10

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

ON CHARACTERISTICS(1)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc)

(IC = 10 mAdc, VCE = 10 Vdc)

(IC = 30 mAdc, VCE = 10 Vdc)

Collector–Emitter Saturation Voltage

(IC = 30 mAdc, IB = 3.0 mAdc)

hFE

25

40

40

VCE(sat)

—

—

—

—

—

0.75

Vdc

Base–Emitter On Voltage

(IC = 30 mAdc, VCE = 10 Vdc)

VBE(on)

—

0.85

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)

fT

45

—

MHz

Collector–Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz)

v v 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

Ccb

—

3.0

pF

200

VCE = 10 V

100

70

50

TJ = 125°C

25°C

–55°C

30

20

1.0

2.0 3.0 5.0 7.0 10

20 30 50 70 100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0

1.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 10 V

5.0

VCE(sat) @ IC/IB = 10

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

Figure 3. “On” Voltages

50 70 100

0.6

0.5

0.4

0.3

0.2

IC = 10 mA

0.1

TJ = 25°C

IC = 30 mA

IC = 20 mA

0

0.1 0.2

0.5 1.0 2.0 5.0 10 20 30

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

2.5

2.0

1.5

+ IC

IB

10

25°C to 125°C

1.0

0.5 RθVC for VCE(sat)

0

–0.5

–55°C to 25°C

–1.0

–1.5 RθVB for VBE

–2.0

–55°C to 125°C

–2.5

1.0

2.0 3.0 5.0 7.0 10

20 30

IC, COLLECTOR CURRENT (mA)

50 70 100

Figure 4. Temperature Coefficients

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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