FDG312P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDG312P Datasheet PDF : 8 Pages
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Typical Characteristics
6
VGS= -4.5V
-3.5V
5
-3.0V
-2.5V
4
3
-2.0V
2
1
-1.5V
0
0
1
2
3
4
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -1.2A
1.4 V GS = -4.5V
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature.
4
VDS = -5V
3
TJ = -55°C
25°C
125°C
2
1
0
0.5
1
1.5
2
2.5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2.2
2 VGS = -2.0V
1.8
1.6
1.4
1.2
1
0.8
0
1
-2.5V
-3.0V
-3.5V
-4.0V
-4.5V
2
3
4
5
6
- ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.5
0.4
0.3
0.2
0.1
0
1
ID = -0.6A
TJ = 125°C
TJ = 25°C
2
3
4
5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
VGS= 0V
1
0.1
TJ= 125°C
25°C
-55°C
0.01
0.001
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG312P Rev. C
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