FDG312P 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDG312P Datasheet PDF : 8 Pages
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Typical Characteristics (continued)
5
I D = -1.2A
4
3
VDS= -5V
-10V
-15V
2
1
0
0
1
2
3
4
Q g , GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
1000
300
Ciss
100
Coss
30
f = 1 MHz
VGS = 0 V
10
0.1
0.2
0.5
1
2
5
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Crss
10
20
Figure 8. Capacitance Characteristics.
10
3
1
RDS(ON) LIMIT
0.3
0.1
VGS = -4.5V
SINGLE PULSE
1ms
10ms
100ms
1s
10s
DC
0.03 RθJA = 260°C/W
T A = 25°C
0.01
0.1 0.2
0.5 1
2
5
10 20
50
-VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
30
SINGLE PULSE
24
RθJA= 260oC/W
TA= 25oC
18
12
6
0
0.0001 0.001
0.01
0.1
1
10
SINGLE PULS E TIME (SEC)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5 D = 0.5
0.2
0.1
0.05
0.01
0.1
0.05
0.01
0.02
Single Pulse
0.005
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
R θJA (t) = r(t) * R θJA
R θJA =260°C/W
P(pk)
t1
t2
TJ - TA = P * R θJA (t)
Duty Cycle, D = t 1/ t 2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDG312P Rev. C
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