KSC5402D 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSC5402D Datasheet PDF : 10 Pages
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Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
Collector-Base Breakdown
Voltage
IC=1mA, IE=0
BVCEO
Collector-Emitter Breakdown
Voltage
IC=5mA, IB=0
BVEBO
Emitter-Base Breakdown
Voltage
IE=1mA, IC=0
ICES
ICEO
IEBO
hFE
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCE(sat) Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation
Voltage
Cib
Input Capacitance
Cob
Output Capacitance
fT
Current Gain Bandwidth
Product
VCES=1000V, IEB=0 TA=25°C
TA=125°C
VCE=450V, VB=0
TA=25°C
TA=125°C
VEB=10V, IC=0
VCE=1V, IC=0.4A
TA=25°C
TA=125°C
VCE=1V, IC=1A
TA=25°C
TA=125°C
IC=0.4, IB=0.04A
TA=25°C
TA=125°C
IC=1A, IB=0.2A
TA=25°C
TA=125°C
IC=0.4A, IB=0.04A
TA=25°C
TA=125°C
IC=1A, IB=0.2A
TA=25°C
TA=125°C
VEB=8V, IC=0, f=1MHz
VCB=10V, IE=0, f=1MHz
IC=0.5A, VCE=10V
VF
Diode Forward Voltage
IF=1A
IF=0.2A
IF=0.4A
TA=25°C
TA=25°C
TA=125°C
TA=25°C
TA=125°C
Min.
1000
450
12
14
8
6
4
Typ.
1090
525
14
0.03
1.2
0.3
15
0.01
29
17
9
6
0.25
0.4
0.3
0.65
0.78
0.65
0.85
0.75
330
35
11
0.86
0.75
0.6
0.8
0.65
Max. Units
V
V
V
100 μA
500 μA
100 μA
500 μA
100 μA
0.6
V
1.0
V
0.75 V
1.2
V
1.0
V
0.9
V
1.1
V
1.0
V
500 pF
100 pF
MHz
1.5
V
1.2
V
V
1.3
V
V
© 2009 Fairchild Semiconductor Corporation
KSC5402D/KSC5402DT Rev. C0
2
www.fairchildsemi.com
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