MMBT918 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MMBT918

NPN RF Transistor

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor

(continued)

Min Max Units

OFF CHARACTERISTICS

VCEO(sus)

Collector-Emitter Sustaining Voltage* IC = 3.0 mA, IB = 0

15

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 1.0 µA, IE = 0

30

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 10 µA, IC = 0

3.0

ICBO

Collector Cutoff Current

VCB = 15 V, IE = 0

VCB = 15 V, TA = 150°C

ON CHARACTERISTICS

hFE

DC Current Gain

IC = 3.0 mA, VCE = 1.0 V

20

VCE(sat)

Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA

VBE(sat)

Base-Emitter Saturation Voltage

IC = 10 mA, IB = 1.0 mA

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Cibo

Current Gain - Bandwidth Product

IC = 4.0 mA, VCE = 10 V,

600

f = 100 MHz

Output Capacitance

Input Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

VCB = 0, IE = 0, f = 1.0 MHz

VBE = 0.5 V, IC = 0, f = 1.0 MHz

NF

Noise Figure

IC = 1.0 mA, VCE = 6.0 V,

RG = 400Ω, f = 60 MHz

FUNCTIONAL TEST

Gpe

Amplifier Power Gain

PO

Power Output

η

Collector Efficiency

VCB = 12 V, IC = 6.0 mA,

15

f = 200 MHz

VCB = 15 V, IC = 8.0 mA,

30

f = 500 MHz

VCB = 15 V, IC = 8.0 mA,

25

f = 500 MHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

0.01

1.0

0.4

1.0

1.7

3.0

2.0

6.0

V

V

V

µA

µA

V

V

MHz

pF

pF

pF

dB

dB

mW

%

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