MMBT918 데이터 시트보기 (PDF) - Fairchild Semiconductor

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MMBT918

NPN RF Transistor

Fairchild Semiconductor 

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

90 VCE = 5V

80

125 °C

70

60

25 °C

50

40

- 40 °C

30

20

0.1 0.2 0.5 1 2

5 10 20 50

I C - COLLECTOR CURRENT (mA)

Base-Emitter Saturation

Voltage vs Collector Current

β = 10

1

- 40 °C

0.8

25 °C

0.6

125 °C

0.4

0.1

1

10

30

I C - COLLECTOR CURRENT (mA)

Collector-Cutoff Current

vs Ambient Temperature

5

VCB= 20V

1

0.1

25

50

75

100

125

150

T A - AMBIENTTEMPERATURE (° C)

NPN RF Transistor

(continued)

Collector-Emitter Saturation

Voltage vs Collector Current

0.3

0.25

β = 10

0.2

0.15

125 °C

0.1

0.05

25 °C

- 40 °C

0.1

1

10

30

I C - COLLECTOR CURRENT (mA)

Base-Emitter ON Voltage vs

Collector Current

1

0.9 VCE = 5V

0.8

- 40 °C

0.7

25 °C

0.6

125 °C

0.5

0.4

0.3

0.1

1

10 20

I C - COLLECTOR CURRENT (mA)

Input and Output Capacitance

vs Reverse Voltage

100

f = 1.0 MHz

10

1

Cob

Cib

0.1

0.1

1

10

100

VCE - COLLECTOR VOLTAGE (V)

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