MMBT918 데이터 시트보기 (PDF) - Yea Shin Technology Co., Ltd
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MMBT918 Datasheet PDF : 3 Pages
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DEVICE CHARACTERISTICS
MMBT918
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
ON CHARACTERISTICS
DC Current Gain
(I C = 3.0 mAdc, V CE = 1.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
hFE
VCE(sat)
V BE(sat)
20
––
––
0.4
—
1.0
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = 4.0 mAdc, V CE = 10 Vdc, f = 100 MHz)
Output Capacitance
(V CB = 0 Vdc, I E = 0, f = 1.0 MHz)
(V CB = 10 Vdc, I E = 0, f = 1.0 MHz)
Input Capacitance
(V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz)
Noise Figure
(I C = 1.0 mAdc, V CE = 6.0 Vdc, R S = 50 Ω, f = 60 MHz) (Figure 1)
Power Output
(I C = 8.0 mAdc, V CB = 15 Vdc, f = 500 MHz)
Common–Emitter Amplifier Power Gain
(I C = 6.0 mAdc, V CB = 12 Vdc, f = 200 MHz)
fT
C obo
C ibo
NF
P out
G pe
600
—
—
3.0
—
1.7
—
2.0
—
6.0
30
—
11
—
V BB
EXTERNAL
100 k
V CC
1000 pF BYPASS
Unit
––
Vdc
Vdc
MHz
pF
pF
dB
mW
dB
0.018 µF
0.018 µF
0.018 µF
C
RF
50 Ω
VM
3
G
0.018 µF
NF TEST CONDITIONS
I C = 1.0 mA
V CE = 6.0 VOLTS
R S = 50 Ω
f = 60 MHz
G pe TEST CONDITIONS
I C = 6.0 mA
V CE = 12 VOLTS
f = 200 MHz
Figure 1. NF, G pe Measurement Circuit 20–200
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REV.02 20120705
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