MMBT918 데이터 시트보기 (PDF) - New Jersey Semiconductor

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MMBT918

NPN RF Transistor

New Jersey Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor

(continued)

Min Max Units

OFF CHARACTERISTICS

VcEO(SUS)

Collector-Emitter Sustaining Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

lc = 3.0 mA, IB = 0

lc= 1.0 uA, IE = 0

le = 10nA, lc = 0

VCB = 15V, I E = 0

VCB = 15V, TA=150°C

ON CHARACTERISTICS

hFE

DC Current Gain

vcE(sat)

VeE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

lc = 3.0 rnA, VCE = 1.0V

lc= 10mA, IB = 1.0mA

\ = 10mA, IB = 1.0mA

15

V

30

V

3.0

V

0.01

MA

1.0

HA

20

0.4

V

1.0

V

SMALL SIGNAL CHARACTERISTICS

ft

Current Gain - Bandwidth Product

lc = 4.0 mA, VCE = 10V,

600

f= 100MHz

Cobo

Output Capacitance

VCB = 10V, IE = 0, f =1.0 MHz

VCB = 0, IE = 0, f = 1.0MHz

Cibo

Input Capacitance

VBE = 0.5V, lc = 0, f = 1.0MHz

NF

Noise Figure

lc= 1.0mA, VCE = 6.0V,

RG = 400H, f = 60 MHz

MHz

1.7

pF

3.0

pF

2.0

pF

6.0

dB

FUNCTIONAL TEST

Gpe

Amplifier Power Gain

VCB= 12V, lc = 6.0mA,

15

dB

f = 200 MHz

Po

Power Output

VCB = 15V, lc = 8.0mA,

30

mW

f = 500 MHz

T!

Collector Efficiency

VCB = 15V, lc = 8.0mA,

25

%

f = 500 MHz

Pulse Test: Pulse Width < 300 (is, Duty Cycle < 2.0%

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