IRF520A 데이터 시트보기 (PDF) - Fairchild Semiconductor

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IRF520A

Advanced Power MOSFET

Fairchild Semiconductor 

Advanced Power MOSFET

IRF520A

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175ΟC Operating Temperature

Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

Lower RDS(ON) : 0.155 Ω (Typ.)

Absolute Maximum Ratings

Symbol

VDSS

ID

IDM

VGS

EAS

IAR

EAR

dv/dt

PD

TJ , TSTG

TL

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (TC=25 ΟC)

Continuous Drain Current (TC=100 ΟC)

Drain Current-Pulsed

O1

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

O2

Avalanche Current

O1

Repetitive Avalanche Energy

O1

Peak Diode Recovery dv/dt

O3

Total Power Dissipation (TC=25 ΟC)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Thermal Resistance

Symbol

R θ JC

R θ CS

R θ JA

Characteristic

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

BVDSS = 100 V

RDS(on) = 0.2 Ω

ID = 9.2 A

TO-220

1

2

3

1.Gate 2. Drain 3. Source

Value

100

9.2

6.5

37

+_ 20

113

9.2

4.5

6.5

45

0.3

- 55 to +175

300

Units

V

A

A

V

mJ

A

mJ

V/ns

W

W/ ΟC

ΟC

Typ.

--

0.5

--

Max.

3.31

--

62.5

Units

ΟC /W

Rev. B

©1999 Fairchild Semiconductor Corporation

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