BAS16H 데이터 시트보기 (PDF) - ON Semiconductor

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BAS16H

Switching Diode

ON Semiconductor 

BAS16H, SBAS16H

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

(VR = 100 Vdc)

(VR = 75 Vdc, TJ = 150°C)

(VR = 25 Vdc, TJ = 150°C)

Reverse Breakdown Voltage

(IBR = 100 mAdc)

Forward Voltage

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

Diode Capacitance

(VR = 0, f = 1.0 MHz)

Forward Recovery Voltage

(IF = 10 mAdc, tr = 20 ns)

IR

−

−

−

V(BR)

100

mAdc

1.0

50

30

−

Vdc

VF

mV

−

715

−

855

−

1000

−

1250

CD

−

2.0

pF

VFR

−

1.75

Vdc

Reverse Recovery Time

(IF = IR = 10 mAdc, RL = 50 W)

trr

−

6.0

ns

Stored Charge

(IF = 10 mAdc to VR = 5.0 Vdc,

RL = 500 W)

QS

−

45

pC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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