BAS16H 데이터 시트보기 (PDF) - Philips Electronics
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BAS16H Datasheet PDF : 10 Pages
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Philips Semiconductors
BAS16H
High-speed switching diode in SOD123F package
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VRRM
repetitive peak reverse
-
voltage
VR
reverse voltage
-
IF
forward current
[1] -
IFRM
repetitive peak forward
-
current
IFSM
non-repetitive peak forward tp = 50 µs
[2] -
current
tp = 1 ms
[2] -
tp = 10 ms
[2] -
Ptot
total power dissipation
[1] -
[3] -
Tj
junction temperature
-
Tamb
ambient temperature
−65
Tstg
storage temperature
−65
Max Unit
100
V
100
V
215
mA
500
mA
4
A
2
A
1.5
A
0.38 W
0.83 W
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB) with 60 µm copper strip line.
[2] Square wave; Tj = 25 °C prior to surge.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
Min Typ Max
[1] -
-
330
[2] -
-
150
-
-
70
Unit
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB with 60 µm copper strip line.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
9397 750 14478
Product data sheet
Rev. 01 — 15 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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