SMP30-68 데이터 시트보기 (PDF) - STMicroelectronics
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SMP30-68 Datasheet PDF : 9 Pages
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SMP30
Characteristics
Figure 4. On-state voltage versus on-state
current (typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
IT(A)
50
IH[Tj] / IH[Tj=25°C]
2.0
1.8
20
Tj=25°C
1.6
1.4
10
1.2
1.0
5
0.8
0.6
2
0.4
VT(V)
0.2
Tj(°C)
1
0.0
0
1
2
3
4
5
6
7
8
9 10 -40
-20
0
20
40
60
80 100 120
Figure 6.
Relative variation of breakover
voltage versus junction
temperature
VBO[Tj] / VBO[Tj=25°C]
1.10
Figure 7.
Relative variation of leakage
current versus reverse voltage
applied (typical values)
IRM[Tj] / IRM[Tj=25°C]
2000
1000
VR=VRM
1.05
100
1.00 270 V
10
0.95
62 V
0.90
-40
-20
0
Tj(°C)
20
40
60
80
100
1
25
Tj(°C)
50
75
100
125
Figure 8.
Variation of thermal impedance
junction to ambient versus pulse
duration
Zth(j-a)(°C/W)
1E+2
Printed circuit board FR4,
copper thickness = 35 µm,
recommended pad layout
1E+1
Figure 9.
Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
C[VR] / C[VR=50V]
2.5
2.0
Tj=25°C
F=1MHz
VRMS=1V
1.5
1.0
1E+0
0.5
tp(s)
1E-1
VR(V)
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
0.0
1
2
5
10
20
50 100
300
Doc ID 5603 Rev 7
5/9
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