FDB6644 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDB6644 Datasheet PDF : 5 Pages
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Typical Characteristics
10
ID = 25A
8
6
4
2
0
0
10
VDS = 5V
10V
15V
20
30
40
50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100 RDS(ON) LIMIT
10
VGS = 10V
SINGLE PULSE
RθJC = 1.8oC/W
TC = 25oC
1ms 100us
10ms
1s 100ms
DC
1
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
4200
3500
CISS
2800
f = 1MHz
VGS = 0 V
2100
1400
COSS
700
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
1000
800
SINGLE PULSE
RθJC = 1.8°C/W
TC = 25°C
600
400
200
0
0.0001 0.001 0.01 0.1
1
10
100 1000
t1, TIME (sec)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJC(t) = r(t) + RθJC
RθJC = 1.8 °C/W
P(pk)
t1
t2
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
0.01
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
1000
FDP6644 Rev C(W)
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