MJE802 데이터 시트보기 (PDF) - Inchange Semiconductor
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| MJE802 Datasheet PDF : 0 Pages | |||
Inchange Semiconductor
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type MJE700/701/702/703
·High DC current gain
·DARLINGTON
APPLICATIONS
·Designed for general–purpose amplifier
and low–speed switching applications
PINNING (see Fig.2)
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Product Specification
MJE800/801/802/803
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
MJE800/801
MJE802/803
Open emitter
VCEO
Collector-emitter voltage
MJE800/801
MJE802/803
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
IB
Base current
PC
Collector power dissipation
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
60
80
60
80
5
4
0.1
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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