D3NM60 데이터 시트보기 (PDF) - STMicroelectronics
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D3NM60
STMicroelectronics
D3NM60 Datasheet PDF : 17 Pages
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Electrical characteristics
2
Electrical characteristics
STD3NM60, STD3NM60-1, STP4NM60
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V(BR)DSS breakdown voltage
ID = 250 µA, VGS =0
600
V
Zero gate voltage
VDS = max rating
1
µA
) IDSS
drain current (VGS = 0)
VDS = max rating,
TC = 125°C
ct(s IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20V
du VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA
3
Pro RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 1.5 A
10
µA
±5
µA
4
5
V
1.3
1.5
Ω
lete Table 6. Dynamic
so Symbol
Parameter
Ob gfs (1)
t(s) - Ciss
Coss
uc Crss
rod td(on)
Ptr
td(off)
tetf
ole Qg
s Qgs
Ob Qgd
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
Min. Typ. Max. Unit
VDS = 15 V , ID = 1.5 A
-
2.7
-
S
324
pF
VDS = 25 V, f = 1 MHz,
-
132
-
pF
VGS = 0
7.4
pF
9
ns
VDD = 300 V, ID = 1.5 A
4
ns
RG = 4.7 Ω VGS = 10 V
(see Figure 15)
-
16.5
-
ns
10.5
ns
VDD = 480 V, ID = 3 A,
10
14
nC
VGS = 10V
-
3
nC
(see Figure 21)
4.7
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/17
Doc ID 8370 Rev 4
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