STD3NM50 데이터 시트보기 (PDF) - STMicroelectronics
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STD3NM50
STMicroelectronics
STD3NM50 Datasheet PDF : 10 Pages
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STD3NM50/STD3NM50-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.73
°C/W
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
1
A
EAS
Single Pulse Avalanche Energy
130
mJ
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
) ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
t(s OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
uc V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
V
d Breakdown Voltage
Pro t(s) IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C
1
µA
10
µA
lete uc IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
±5
µA
bso Prod ON (1)
- O te Symbol
) le VGS(th)
t(s so RDS(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS, ID = 250µA
Static Drain-source On VGS = 10V, ID = 1.5A
Resistance
Min.
3
Typ.
4
2.5
Max. Unit
5
V
3
Ω
roduc ) - Ob DYNAMIC
P t(s Symbol
Parameter
Test Conditions
lete uc gfs (1)
Forward Transconductance VDS > ID(on) x RDS(on)max,
ID = 3 A
d Ciss
so ro Coss
Input Capacitance
Output Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
b P Crss
Reverse Transfer
O teCapacitance
le RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
o Test Signal Level = 20mV
s Open Drain
ObNote: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
0.7
140
40
4
4
Max. Unit
S
pF
pF
pF
Ω
2/10
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