MJD2955 데이터 시트보기 (PDF) - Inchange Semiconductor

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MJD2955

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

MJD2955

DESCRIPTION

·Excellent Safe Operating Area

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -1.1 V(Max)@ IC = -4A

·Complement to Type MJD3055

·DPAK for Surface Mount Applications

·Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current

-6

A

Collector Power Dissipation @TC=25℃

20

PC

W

Collector Power Dissipation @TC=25℃

1.75

Tj

Junction Tmperature

150

℃

Tstg

Storage Temperature Range

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE UNIT

Rth j-c Thermal Resistance,Junction to Case

6.25 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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