MJF18006 데이터 시트보기 (PDF) - Motorola => Freescale

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MJF18006

SWITCHMODE NPN Bipolar Power Transistor

Motorola => Freescale 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MJE18006 MJF18006

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS — continued (TC = 25_C unless otherwise specified)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic

Symbol

Min

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 1.3 Adc, IB = 0.13 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base–Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.6 Adc)

VBE(sat)

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Saturation Voltage

(IC = 1.3 Adc, IB = 0.13 Adc)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (IC = 3.0 Adc, IB = 0.6 Adc)

VCE(sat)

—

(TC = 125_C)

—

—

(TC = 125_C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 0.5 Adc, VCE = 5.0 Vdc)

hFE

14

(TC = 125_C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 3.0 Adc, VCE = 1.0 Vdc)

6.0

(TC = 125_C)

5.0

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 1.3 Adc, VCE = 1.0 Vdc)

(TC = 25 to 125_C)

11

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc)

10

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz)

fT

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Cob

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Input Capacitance (VEB = 8.0 V)

Cib

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Dynamic Saturation Voltage:

(IC = 1.3 Adc

1.0 µs (TC = 125°C) VCE(dsat)

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Determined 1.0 µs and

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 3.0 µs respectively after

rising IB1 reaches 90% of

IB1 = 130 mAdc

VCC = 300 V)

3.0 µs

(TC = 125°C)

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ final IB1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (see Figure 18)

(IC = 3.0 Adc

1.0 µs (TC = 125°C)

—

—

IB1 = 0.6 Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ VCC = 300 V)

3.0 µs (TC = 125°C)

—

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ v SWITCHING CHARACTERISTICS: Resistive Load(D.C. 10%, Pulse Width = 20µs)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Turn–On Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

ton

—

IB2 = 1.5 Adc, VCC = 300 V) (TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Turn–Off Time

toff

—

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Turn–On Time

(IC = 1.3 Adc, IB1 = 0.13 Adc,

ton

—

IB2 = 0.65 Adc, VCC = 300 V) (TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Turn–Off Time

toff

—

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µH)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

(IC = 1.5 Adc, IB1 = 0.13 Adc,

tfi

—

IB2 = 0.65 Adc)

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

tsi

—

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

tc

—

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Fall Time

(IC = 3.0 Adc, IB1 = 0.6 Adc,

tfi

—

IB2 = 1.5 Adc)

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Storage Time

tsi

—

(TC = 125°C)

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Crossover Time

tc

—

(TC = 125°C)

—

Typ

Max

Unit

0.83

1.2

Vdc

0.94

1.3

Vdc

0.25

0.6

0.27

0.65

0.35

0.7

0.4

0.8

—

34

—

32

—

10

—

8.0

—

17

—

22

—

14

75

1000

5.5

12

3.0

7.0

9.5

14.5

2.0

7.5

—

120

1500

—

—

—

—

—

—

—

—

MHz

pF

pF

Volts

90

180

ns

100

—

1.7

2.5

µs

2.1

—

200

300

ns

130

—

1.2

2.5

µs

1.5

—

100

180

ns

120

—

1.5

2.5

µs

1.9

—

220

350

ns

230

—

85

150

ns

120

—

2.15

3.2

µs

2.75

—

200

300

ns

310

—

2

Motorola Bipolar Power Transistor Device Data

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