MJE243 데이터 시트보기 (PDF) - Continental Device India Limited
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MJE243 Datasheet PDF : 4 Pages
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN EPITAXIAL SILICON POWER TRANSISTOR
MJE243
TO-126
Plastic Package
ECB
Complementary MJE253
Designed for Low Power Audio Amplifier and Low-Current, High-Speed Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Continuous Collector Current
Peak
Base Current
Total Power Dissipation @ Tc=25 ºC
Derate Above 25ºC
Total Power Dissipation @ Ta=25 ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
PD
Tj, Tstg
Value
100
100
7.0
4.0
8.0
1.0
15
0.12
1.5
0.012
- 65 to +150
UNIT
V
V
V
A
A
W
W/ºC
W
W/ºC
ºC
Thermal Characteristics
Junction to Case
Junction to Ambient
Rth(j-c)
Rth(j-a)
8.34
ºC/W
83.4
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise )
DESCRIPTION
Collector Emitter Sustaning Voltage
Collector Cut off Current
SYMBOL
VCEO (Sus)
ICBO
TEST CONDITION
IC=10mA, IB=0
VCB=100V, IE=0
MIN
100
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
Base Emitter on Voltage
TC=125ºC
VCB=100V, IE=0
IEBO
VBE=7V, IC=0
hFE
IC=200mA, VCE=1V
40
IC=1A, VCE=1V
15
VCE (Sat) IC=500mA, IB=50mA
VBE (Sat)
IC=1A, IB=100mA
IC=2A, IB=200mA
VBE (on)
IC=500mA, VCE=1V
TYP MAX UNIT
V
0.1
µA
0.1 mA
0.1
µA
180
0.3
V
0.6
1.8
V
1.5
V
Continental Device India Limited
Data Sheet
Page 1 of 4
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