2SD424 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD424 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD424
DESCRIPTION
·With TO-3 package
·Complement to type 2SB554
·High power dissipation
·High collector-emitter breakdown voltage
: VCEO=180V(min)
APPLICATIONS
·Power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
固IN电C半H导AN体GE SEMICONDUTOR Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
CONDITIONS
Open emitter
VALUE
180
UNIT
V
VCEO
Collector-emitter voltage
Open base
180
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
15
A
IB
Base current
1.5
A
PC
Collector power dissipation
TC=25℃
150
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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