BFR91AGELB 데이터 시트보기 (PDF) - Vishay Semiconductors
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BFR91AGELB Datasheet PDF : 8 Pages
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Not for new design, this product will be obsoleted soon
BFR91A
Vishay Semiconductors
Silicon NPN Planar RF Transistor
Features
• High power gain
• Low noise figure
e3
• High transition frequency
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• RF amplifier up to GHz range specially for wide
band antenna amplifier
Mechanical Data
Case: TO-50 plastic case
Weight: approx. 111 mg
Pinning: 1 = collector, 2 = emitter, 3 = base
3B
3
2
E
2
1
1C
19039
Electrostatic sensitive device.
Observe precautions for handling.
Parts Table
Part
BFR91A
Ordering code
BFR91AGELB
Marking
BFR91A
Remarks
Packed in Bulk
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Collector base voltage
Test condition
Collector emitter voltage
Emitter base voltage
Collector current
Total power dissipation
Junction temperature
Tamb ≤ 60 °C
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
20
12
2
50
300
150
- 65 to + 150
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
Note:
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu
Symbol
RthJA
Value
300
Package
TO-50(3)
Unit
V
V
V
mA
mW
°C
°C
Unit
K/W
Document Number 85031
Rev. 1.6, 08-Sep-08
For technical support, please contact: RF-Transistor@vishay.com
www.vishay.com
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