HM62W8512B 데이터 시트보기 (PDF) - Renesas Electronics

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HM62W8512B

4 M SRAM (512-kword × 8-bit)

Renesas Electronics 

HM62W8512B Series

DC Characteristics (Ta = –20 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0 V)

Parameter

Symbol Min

Typ*1 Max Unit Test conditions

Input leakage current

Output leakage current

|ILI|

—

|ILO|

—

Operating power

supply current: DC

I CC

—

Operating

HM62W8512B-5 ICC1

—

power supply

current

HM62W8512B-7 ICC1

—

Operating power

supply current

I CC2

—

Standby power supply

current: DC

I SB

—

—

1

µA Vin = VSS to VCC

—

1

µA CS = VIH or OE = VIH or

WE = VIL, VI/O = VSS to VCC

—

10

mA CS = VIL,

others = VIH/VIL, II/O = 0 mA

—

45

mA Min cycle, duty = 100%

CS = VIL, others = VIH/VIL

II/O = 0 mA

—

40

mA

5

10

mA Cycle time = 1 µs,

duty = 100%

II/O = 0 mA, CS ≤ 0.2 V

VIH ≥ VCC – 0.2 V,

VIL ≤ 0.2 V

0.1

0.3

mA CS = VIH

Standby power supply

current (1): DC

I SB1

—

—

1*2

40*2 µA Vin ≥ 0 V,

CS ≥ VCC – 0.2 V

1*3

20*3 µA

—

1*4

5*4

µA

Output low voltage

VOL

—

—

0.4

V IOL = 2.0 mA

—

—

0.2

V IOL = 100 µA

Output high voltage

VOH

VCC – 0.2 —

—

V IOH = –100 µA

2.4

—

—

V IOH = –2.0 mA

Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and specified loading, and not guaranteed.

2. This characteristics is guaranteed only for L version.

3. This characteristics is guaranteed only for L-SL version.

4. This characteristics is guaranteed only for L-UL version.

Capacitance (Ta = +25°C, f = 1 MHz)

Parameter

Symbol

Typ

Max

Input capacitance*1

Cin

—

8

Input/output capacitance*1 CI/O

—

10

Note: 1. This parameter is sampled and not 100% tested.

Unit

pF

pF

Test conditions

Vin = 0 V

VI/O = 0 V

6

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