SFH6343 데이터 시트보기 (PDF) - Infineon Technologies
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SFH6343 Datasheet PDF : 5 Pages
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FEATURES
• Surface Mountable
• Industry Standard SOIC-8 Footprint
• Compatible with Infrared Vapor Phase Reflow and
Wave Soldering Processes
• Isolation Voltage, 3000 VRMS
• Very High Common Mode Transient Immunity:
15000 V/µs at VCM=1500 V Guaranteed (SFH6343)
• High Speed: 1.0 Mb/s
• TTL Compatible
• Guaranteed AC and DC Performance Over
Temperature: 0°C to 70°C
• Open Collector Output
• Pin Compatible with HP Optocouplers
SFH6315—HCPL0500
SFH6316—HCPL0501
SFH6343—HCPL0453
APPLICATIONS
• Line Receivers
• Logic Ground Isolation
• Analog Signal Ground Isolation
• Replace Pulse Transformers
DESCRIPTION
The SFH6315/16/43, high speed optocouplers, each con-
sists of a GaAlAs infrared emitting diode, optically cou-
pled with an integrated photodetector and a high speed
transistor. The photodetector is junction isolated from the
transistor to reduce miller capacitance effects. The open
collector output function allows circuit designers to adjust
the load conditions when interfacing with different logic
systems such as TTL, CMOS, etc.
Because the SFH6343 has a Faraday shield on the detec-
tor chip, it can also reject and minimize high input to out-
put common mode transient voltages. There is no base
connection, further reducing the potential electrical noise
entering the package.
The SFH6315/16/43 are packaged in industry standard
SOIC-8 packages and are suitable for surface mounting.
SFH6315
SFH6316
SFH6343
High Speed Optocoupler
Package Dimensions in Inches (mm)
SFH6315/6
NC 1
8 VCC
A2
7 Base VB
.120±.002
(3.05±.05)
K3
6C
NC 4
5E
.240
(6.10)
Pin 1
SFH6343
CL(.135.941±±.0.0052)
NC 1
A2
8 VCC
7 NC
.016
(.41)
.192±.005
(4.88±.13)
K3
6C
NC 4
5E
.015±.002
(.38±.05)
7°
40° .058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
.050 (1.27) typ.
.021 (.53)
.020±.004
(.51±.10)
2 plcs.
5° max.
R.010
(.25) max.
.125±.005
(3.18±.13)
Lead
Coplanarity
±.0015 (.04)
max.
TOLERANCE: ±.005 (unless otherwise noted)
Absolute Maximum Ratings
Emitter (GaAlAs)
Reverse Voltage......................................................................... 3.0 V
DC Forward Current.................................................................25 mA
Surge Forward Current (tp≤1.0 µs, 300 pulses/s)......................1.0 A
Total Power Dissipation (TA≤70°C) ......................................... 45 mW
Detector (Si Photodiode + Transistor)
Supply Voltage................................................................ –0.5 to 30 V
Output Voltage.............................................................. –0.5V to 25 V
Output Current........................................................................8.0 mA
Total Power Dissipation (TA≤70°C) ....................................... 100 mW
Package
Isolation Test Voltage
between emitter and detector.......................................3000 VRMS
(refer to climate DIN 40046, part 2, Nov. 74)
Pollution Degree (DIN VDE 0110).................................................... 2
Creepage............................................................................. ≥4.0 mm
Clearance ............................................................................ ≥4.0 mm
Comparative Tracking Index
per DIN IEC 112/VDE 0303, part 1 .......................................... 175
Isolation Resistance
VIO=500 V, TA=25°C, RISOL (Note 2) ................................. ≥1012 Ω
VIO=500 V, TA=100°C, RISOL(Note 2) ................................ ≥1011 Ω
Storage Temperature Range .................................. –55°C to +150°C
Ambient Temperature Range.................................. –55°C to +100°C
Junction Temperature .............................................................. 100°C
Soldering Temperature (t=10 s max.)
Dip soldering: distance to seating plane ≥1.5 mm .............. 260°C
2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany
www.osram-os.com • +49-941-202-7178
1
May 17, 2000–09
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