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BYS12-90(1998) 데이터 시트보기 (PDF) - Vishay Semiconductors

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제조사
BYS12-90
(Rev.:1998)
Vishay
Vishay Semiconductors Vishay
BYS12-90 Datasheet PDF : 4 Pages
1 2 3 4
BYS12–90
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
7
6
VR = VR RM
5
4
RthJA=25K/W
3
2
1
RthJA=100K/W
0
0
40
80
120 160 200
95 9720
Tj – Junction Temperature ( °C )
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
VR = VR RM
2.0
VR = 0 V, Half Sinewave
1.6
RthJA=25K/W
1.2
100K/W
0.8
0.4 125K/W
150K/W
0
0
40
80
120 160 200
95 9723
Tamb – Ambient Temperature ( °C )
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
100
Tj = 150°C
10
10
1
Tj = 25°C
1
0.1
0.1
0
40
80
120 160 200
95 9721
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Current vs.
Junction Temperature
0.01
0
0.6
1.2
1.8
2.4 3.0
95 9724
VF – Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
2.0
VR = VR RM, Half Sinewave, RthJA=25K/W
1.6
1.2
0.8
0.4
0
0
40
80
120 160 200
95 9722
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 86015
Rev. 2, 24-Jun-98

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