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2SC5227 데이터 시트보기 (PDF) - Inchange Semiconductor

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2SC5227
Iscsemi
Inchange Semiconductor Iscsemi
2SC5227 Datasheet PDF : 5 Pages
1 2 3 4 5
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5227
DESCRIPTION
·High Gain Bandwidth Product
fT = 7 GHz TYP.
·High Gain, Low Noise Figure
S21e2 = 12 dB TYP., NF = 1.0 dB TYP @ f = 1 GHz
APPLICATIONS
·Designed for VHF~UHF wideband low noise amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
20
V
VCEO Collector-Emitter Voltage
10
V
VEBO Emitter-Base Voltage
2
V
IC
Collector Current-Continuous
Collector Power Dissipation
PC
@TC=25
TJ
Junction Temperature
Tstg
Storage Temperature Range
70
mA
0.2
W
150
-55~150
isc websitewww.iscsemi.cn
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