FDS4470 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDS4470 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
EAS
Drain-Source Avalanche Energy
Single Pulse, VDD=40V, ID=12.5A
IAS
Drain-Source Avalanche Current
370 mJ
12.5
A
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 μA
40
ID = 250 μA, Referenced to 25°C
VDS = 32 V, VGS = 0 V
VGS = 30 V, VDS = 0 V
VGS = –20 V, VDS = 0 V
V
42
mV/°C
1
μA
100 nA
–100 nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 μA
2
3.9
5
V
ΔVGS(th)
ΔTJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 μA, Referenced to 25°C
–8
mV/°C
RDS(on)
Static Drain–Source On–Resistance VGS = 10 V, ID = 12.5 A
VGS = 10 V, ID = 12.5 A,TJ=125°C
6
9
mΩ
9
14
ID(on)
On–State Drain Current
VGS = 10 V, VDS = 5 V
25
A
gFS
Forward Transconductance
VDS = 10 V, ID = 12.5 A
45
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 20 V, V GS = 0 V,
f = 1.0 MHz
2659
pF
605
pF
298
pF
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 20 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 20 V, ID = 12.5 A,
VGS = 10 V
14 25
ns
12 22
ns
37 59
ns
29 46
ns
45 63
nC
11.2
nC
11
nC
FDS4470 Rev D1 (W)
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