LB1998 데이터 시트보기 (PDF) - SANYO -> Panasonic

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LB1998

Three-Phase Brushless Motor Driver for CD-ROM Spindle Drive

SANYO -> Panasonic 

LB1998

Electrical Characteristics at Ta = 25°C, VCC1 = 5V, VCC2 = 12V

Parameter

Symbol

Conditions

[Power supply current]

Power supply current

Output idle current

[Output]

ICC1

ICC2

ICC1OQ

ICC2OQ

VCIN = VCREF

VCIN = VCREF

VS/S = 0V

VS/S = 0V

Saturation voltage, upper side 1

Saturation voltage, lower side 1

Current limiter setting voltage

[Hall amplifier]

VOU1

VOD1

VCL

IO = –0.5A, VCC1 = 5V, VCC2 = 12V

IO = 0.5A, VCC1 = 5V, VCC2 = 12V

RRF = 0.25Ω

Common mode input voltage range

Input bias current

Minimum Hall input level

[S/S pin]

VHCOM

IHIB

VHIN

High level voltage

Low level voltage

Input current

Leak current

[Control]

VS/SH

VS/SL

IS/SI

IS/SL

VS/S = 5V

VS/S = 0V

VCIN pin input current

VCREF pin input current

Voltage gain

Startup voltage

Startup voltage width

[Gain switching amplifier]

IVC

IVCREF

GVCO

VCTH

∆VCTH

VCIN = VCREF = 1.65V

VCIN = VCREF = 1.65V

∆VRF/∆VC, Note 1

VCREF = 1.65V, Note 1

VCREF = 1.65V, Note 1

Input offset voltage

OPEN LOOP voltage gain

Same-phase input voltage range

[Hall power supply]

VGCOFFSET

GVGC

VGCOM

Design target value

f = 10 kHz, Design target value

Hall power supply voltage

Allowable current

[Thermal shutdown]

VH

IH = 5 mA

IH

Operating temperature

Hysterisis

[Short braking]

TTSD

∆TTSD

Design target value

Design target value

Brake pin at High level

Brake pin at Low level

[1 Hall FG/3 Hall FG switching]

VBRH

VBRL

FGSEL pin at High level

FGSEL pin at Low level

[Gain switching analog switch]

VFSH

VFSL

Analog switch at High level

RINH

Analog switch at Low level

RINL

Note:

• During S/S OFF (standby), the Hall comparator is at High.

• Gain switching amplifier operated at a factor of 1.

• Design target values are not measured.

Ratings

Unit

min

typ

max

8

mA

250

300 mA

200 µA

60 µA

1.0

V

0.3

V

0.25

V

1.2

VCC1–1.0

V

1

µA

60

mVP-P

2.0

VCC1

V

0.7

V

200 µA

–30

µA

1 µA

1 µA

0.25

times

1.55

1.85

V

100

200 mV

–8

+8 mV

43

dB

0

3.5

V

0.8

V

20

mA

150

180

210 °C

15

°C

4

5V

0

1V

4

5

0

1

VCC–0.5

0

VCC1

0.2

No. 5979-3/9

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