2SK3564 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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2SK3564 Datasheet PDF : 6 Pages
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SEMICONDUCTOR
Fig.11 Drain power dissipation vs.
case temperature
60
40
20
0
0
40
80
120
160
Case temperature, TC (°C)
2SK3564 Series RRooHHSS
Nell High Power Products
Fig.12 Dynamic input/output characteristics
500
20
400
300
200
100
0
0
16
VDD=100V
VDS
200V
VGS
12
400V
8
Common source
ID=3A
4
TC=25°C
Pulse test
0
4
8
12
16
20 24
Total gate charge, Qg (nC)
Fig.13 Transient thermal response curve
10
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
0.001
0.00001
0.0001
0.001
0.01
PDM
t1
t2
Notes:
1. Duty = t1 / t2
2. Rth(j-c) =3.125°C/W
0.1
1
10
Rectangular Pulse Duration , t1 (seconds)
Fig.14 Maximum safe operating area
100
lD max (pulse)
10
lD max (continuous)
1
DC OPERATION
TC = 25°C
100 µs
1 ms
0.1 *Single pulse Tc=25°C
Curves must be derated
linearly with increase in
temperaature.
0.01
1
10
100
1000
10000
Drain-source voltage, VDS (V)
Fig.15 Single pulse avalanche energy vs.
Junction temperature
500
400
300
200
100
0
25
50
75
100
125
150
Junction temperature, TJ (°C)
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