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MLD2N06CL 데이터 시트보기 (PDF) - Motorola => Freescale

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MLD2N06CL Datasheet PDF : 6 Pages
1 2 3 4 5 6
MLD2N06CL
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)
Zero Gate Voltage Drain Current
(VDS = 40 Vdc, VGS = 0 Vdc)
(VDS = 40 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate–Source Leakage Current
(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)
V(BR)DSS
Vdc
58
62
66
58
62
66
IDSS
µAdc
0.6
5.0
6.0
20
IGSS
µAdc
0.5
5.0
1.0
20
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(ID = 250 µAdc, VDS = VGS)
(ID = 250 µAdc, VDS = VGS, TJ = 150°C)
VGS(th)
Vdc
1.0
1.5
2.0
0.6
1
1.6
Static Drain Current Limit
(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)
ID(lim)
Adc
3.8
4.4
5.2
1.6
2.4
2.9
Static Drain–to–Source On–Resistance
(ID = 1.0 Adc, VGS = 5.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc, TJ = 150°C)
RDS(on)
Ohms
0.3
0.4
0.53
0.7
Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)
gFS
1.0
1.4
mhos
Static Source–to–Drain Diode Voltage
(IS = 1.0 Adc, VGS = 0 Vdc)
VSD
Vdc
1.1
1.5
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
td(on)
1.0
1.5
µs
Rise Time
(VDD = 30 Vdc, ID = 1.0 Adc,
tr
Turn–Off Delay Time VGS(on) = 5.0 Vdc, RGS = 25 Ohms)
td(off)
3.0
5.0
5.0
8.0
Fall Time
tf
3.0
5.0
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
5
TJ = 25°C
6.0 V
5.5 V
4
5.0 V
4.5 V
4.0 V
3
3.5 V
3.0 V
2
1
2.5 V
2.0 V
0
0
2
4
6
8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. Output Characteristics
4.0
VDS 7.5 V
3.5
3.0
– 55°C 25°C
TJ = 150°C
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Function
2
Motorola TMOS Power MOSFET Transistor Device Data

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