UTC2SB772S 데이터 시트보기 (PDF) - Unisonic Technologies
부품명
상세내역
제조사
UTC2SB772S Datasheet PDF : 2 Pages
| |||
UTC2SB772S PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
Fig.1 Static characteristics
1.6
1.2
0.8
0.4
0
0
-IB=9mA
-IB=8MA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
4
8
12
16
20
-Collector-Emitter voltage(V)
Fig.2 Derating curve of safe
operating areas
150
100
S/b limited
50
0
-50
0
50
100
150
200
Tc,Case Temperature(¢XC)
Fig.4 Collector Output
capacitance
103
IE=0
f=1MHz
102
101
Fig.5 Current gain-
bandwidth product
103
VCE=5V
102
IB=8mA
101
Fig.3 Power Derating
12
8
4
0
-50
0
50
100
150 200
Tc,Case Temperature(¢XC)
Fig.6 Safe operating area
101 Ic(max),Pulse
Ic(max),DC 10mS
1mS
0.1m
S
100
10-1
100
100
10-1
10-2
10-3
-Collector-Base Voltage(v)
100
10-2
10-1
100
101
Ic,Collector current(A)
10-2
100
101
102
Collector-Emitter Voltage
Fig.7 DC current gain
3
10
VCE=-2V
102
101
100
100
101
102
103
104
-Ic,Collector current(mA)
Fig.8 Saturation Voltage
104
103
VBE(sat)
102
VCE(sat)
1
10
100
100
101
102
103
104
-Ic,Collector current(mA)
UTC UNISONIC TECHNOLOGIES CO. LTD 2
Share Link: 