STPS2L40UF 데이터 시트보기 (PDF) - STMicroelectronics
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STPS2L40UF Datasheet PDF : 10 Pages
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Characteristics
1
Characteristics
STPS2L40
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
40
SMB
TL = 130 °C δ = 0.5
IF(AV) Average forward current SMBflat TL = 140 °C δ = 0.5
2
SMAflat TL = 130 °C δ = 0.5
IFSM
Surge non repetitive forward current tp = 10 ms sinusoidal
75
PARM Repetitive peak avalanche power tp = 1 µs Tj = 25 °C
2200
Tstg
Storage temperature range
Tj
Operating junction temperature (1)
-65 to + 150
150
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
Rth (j-l) Junction to lead
SMB
20
SMBflat
10
SMAflat
20
Unit
V
A
A
W
°C
°C
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Tests conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current
Tj = 25 °C
Tj = 100 °C
VR = 40 V
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 1 A
VF(1) Forward voltage drop
Tj = 25 °C
Tj = 125 °C
IF = 2 A
Tj = 25 °C
Tj = 125 °C
IF = 4 A
1. Pulse test: tp = 380 µs, δ < 2
To evaluate the conduction losses use the following equation:
P = 0.22 x IF(AV) + 0.06 IF2(RMS)
220 µA
20
mA
38 80
mA
0.39
0.25 0.28
V
0.43
0.31 0.34
0.5
V
0.39 0.45
2/10
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