Philips Semiconductors
BGY787
750 MHz, 21.5 dB gain push-pull amplifier
Table 6: Characteristics at bandwidth 40 MHz to 770 MHz
VB = 24 V; Tcase = 30 °C; ZS = ZL = 75 Ω.
Symbol Parameter
Conditions
Gp
power gain
f = 50 MHz
f = 770 MHz
SL
slope cable equivalent
f = 40 MHz to 770 MHz
FL
flatness of frequency response f = 40 MHz to 770 MHz
s11
input return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
s22
output return losses
f = 40 MHz to 80 MHz
f = 80 MHz to 160 MHz
f = 160 MHz to 320 MHz
f = 320 MHz to 640 MHz
f = 640 MHz to 770 MHz
ϕS21
CTB
phase response
composite triple beat
f = 50 MHz
110 channels flat; Vo = 44 dBmV; measured
at 745.25 MHz
Xmod
cross modulation
110 channels flat; Vo = 44 dBmV; measured
at 55.25 MHz
CSO
composite second order
distortion
110 channels flat; Vo = 44 dBmV; measured
at 746.5 MHz
d2
second order distortion
Vo
output voltage
F
noise figure
dim = −60 dB
f = 50 MHz
f = 450 MHz
f = 550 MHz
f = 600 MHz
f = 770 MHz
Itot
total current consumption (DC)
Min Typ Max Unit
21 21.5 22 dB
21.5 22.5 - dB
0
1
1.5 dB
-
±0.2 ±0.5 dB
20 33 - dB
18.5 30 - dB
17 25 - dB
15.5 22.5 - dB
14 20.5 - dB
20 28.5 - dB
18.5 27.5 - dB
17 25 - dB
15.5 22 - dB
14 20 - dB
−45 -
+45 deg
-
−54.5 −53 dB
-
−54 −52 dB
-
−57.5 −53 dB
[1] -
[2] 61
-
-
-
-
-
[3] -
−75 −63 dB
63 - dBmV
4
5 dB
-
5.5 dB
-
5.5 dB
-
6 dB
5
6.5 dB
220 240 mA
[1] fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
[2] Measure according to DIN45004B;
fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo − 6 dB; fr = 749.25 MHz; Vr = Vo − 6 dB; measured at fp + fq − fr = 738.25 MHz.
[3] The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
9397 750 14773
Product data sheet
Rev. 08 — 1 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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