VNB14N04(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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VNB14N04
(Rev.:2012)

"OMNIFET" fully autoprotected Power MOSFET

STMicroelectronics 

Electrical specification

2

Electrical specification

VNB14N04 - VNK14N04FM - VNV14N04

2.1

Absolute maximum rating

Table 2. Absolute maximum rating

Value

Symbol

Parameter

PowerSO-10

Unit

SOT-82FM

D2PAK

) - Obsolete Product(s) 2.2

Obsolete Product(s 2.3

VDS

Drain-source voltage (Vin = 0)

Vin

Input voltage

Internally clamped

V

18

V

ID

Drain current

Internally limited

A

IR

Reverse DC output current

-14

A

Electrostatic discharge (C = 100 pF,

Vesd

R=1.5 KΩ)

2000

V

Ptot

Total dissipation at Tc = 25 °C

Tj

Operating junction temperature

50

9.5

W

Internally limited

°C

Tc

Case operating temperature

Internally limited

°C

Tstg

Storage temperature

-55 to 150

°C

Thermal data

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Thermal resistance junction-ambient

Rthj-amb max

PowerSO-10 SOT82-FM

2.5

13

50

100

D2PAK

2.5

62.5

Unit

°C/W

°C/W

Electrical characteristics

Tcase =25 °C unless otherwise specified.

Table 4.

Symbol

Electrical characteristics

Parameter

Test conditions

Min. Typ. Max. Unit

Off

VCLAMP Drain-source clamp voltage

VCLTH Drain-source clamp threshold voltage

VINCL Input-source reverse clamp voltage

ID = 200 mA Vin = 0

ID = 2 mA Vin = 0

Iin = -1 mA

36 42 48 V

35

V

-1

-0.3 V

4/17

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