KSD5018 데이터 시트보기 (PDF) - Inchange Semiconductor

부품명

상세내역

제조사

KSD5018

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

KSD5018

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCER

Collector-Emitter Voltage

IC= 1mA; RBE= 330Ω

600

V

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.5A; IB1= 0.05A;Clamped

275

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB=B 5mA

1.5

V

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB=B 20mA

1.5

V

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 5mA

2.0

V

ICES

Collector Cutoff Current

VCE= 500V

1

mA

IEBO

Emitter Cutoff Current

VEB= 10V; IC= 0

1

mA

hFE-1

DC Current Gain

IC= 2A ; VCE= 2V

1000

hFE-2

DC Current Gain

IC= 4A ; VCE= 2V

200

isc Website：www.iscsemi.cn

2

Share Link: