KSD5018 데이터 시트보기 (PDF) - Fairchild Semiconductor
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KSD5018 Datasheet PDF : 4 Pages
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KSD5018
Built-in Resistor at B-E for Motor Drive
• High Voltage Power Darlington TR
1
TO-220
1.Base 2.Collector 3.Emitter
NPN Silicon Darlington Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Sym-
bol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
ICP
IB
PC
TJ
TSTG
Collector- Base Voltage
Collector- Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
600
V
275
V
10
V
4
A
6
A
0.5
A
40
W
150
°C
- 55 ~ 150
°C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
VCEO(sus)
BVCER
ICES
IEBO
VCE(sat)
VBE(sat)
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 1.5A, IB = 0.05A, L = 25mH
IC = 1mA, RBE = 330Ω
VCE = 500V
V EB= 10V, IC = 0
IC = 2A, IB = 5mA
IC = 3A, IB = 20mA
IC = 2A, IB = 5mA
Min.
275
600
Max.
1
1
1.5
1.5
2
Units
V
V
mA
mA
V
V
V
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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