2SD2655(2005) 데이터 시트보기 (PDF) - Renesas Electronics

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2SD2655
(Rev.:2005)

Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Renesas Electronics 

2SD2655

Silicon NPN Epitaxial Planer

Low Frequency Power Amplifier

REJ03G0810-0200

(Previous ADE-208-1388A)

Rev.2.00

Aug.10.2005

Features

• Small size package: MPAK (SC–59A)

• Large Maximum current: IC = 1 A

• Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A)

• High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))

• Complementary pair with 2SB1691

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

3

Note: Marking is “WM-“.

1

2

1. Emitter

2. Base

3. Collector

Absolute Maximum Ratings

Item

Symbol

Collector to Base Voltage

VCBO

Collector to emitter voltage

VCEO

Emitter to base voltage

VEBO

Collector current

IC

Collector peak current

ic(peak)

Collector power dissipation

PC

Junction temperature

Tj

Storage temperature

Tstg

Note: *When using alumina ceramic board (25 x 60 x 0.7 mm)

Ratings

60

50

6

1

2

800*

150

−55 to +150

(Ta = 25°C)

Unit

V

V

V

A

A

mW

°C

°C

Rev.2.00 Aug 10, 2005 page 1 of 5

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