NTE66 데이터 시트보기 (PDF) - NTE Electronics
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NTE66 Datasheet PDF : 3 Pages
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA
100 – – V
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
2.0 – 4.0 V
Gate–Source Leakage, Forward IGSS VGS = 20V
– – 100 nA
Gate–Source Leakage, Reverse IGSS VGS = –20V
– – –100 nA
Zero Gate Voltage Drain Current IDSS VDS = Max. Rating, VGS = 0V
– – 250 µA
VDS = Max. Rating x 0.8, VGS = 0V,
TC = +125°C
– – 1000 µA
On–State Drain–Source Current ID(on) VDS > ID(on) x RDS(on)max, VGS = 10V, Note 1 14 –
–
A
Static Drain–Source On–State
Resistance
RDS(on) VGS = 10V, ID = 8.3A, Note 1
– 0.10 0.16 Ω
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Total Gate Charge
(Gate–Source Plus Gate–Drain)
Gate–Source Charge
Gate–Drain (“Miller”) Charge
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS ≥ 50V, ID = 8.3A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 0.5BVDSS, ID = 8.3A, ZO = 12Ω
(MOSFET switching times are essentially
independent of operating temperature)
VGS = 10V, ID = 14A, VDS = 0.8 Max. Rating
(Gate charge is essentially independent of
operating temperature)
5.1 7.6
– 640
– 240
– 72
– 10
– 34
– 23
– 24
– 17
– 3.7
–7
– mhos
– pF
– pF
– pF
15 ns
51 ns
35 ns
36 ns
26 nC
5.5 nC
11 nC
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Source–Drain Diode Ratings and Characteristics:
Parameter
Symbol
Test Conditions
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
IS
ISM Note 2
VSD TC = +25°C, IS = 14A, VGS = 0V
trr TJ = +25°C, IF = 14A, dIF/dt = 100A/µs
Min Typ Max Unit
– – 14 A
– – 56 A
– – 2.5 V
– 120 250 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Note 2. Repetitive rating: Pulse width limited by max, junction temperature.
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