BFR53 데이터 시트보기 (PDF) - Philips Electronics
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BFR53 Datasheet PDF : 12 Pages
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Philips Semiconductors
NPN 2 GHz wideband transistor
Product specification
BFR53
handboo1k,0h0alfpage
h FE
90
80
70
60
50
0
MEA458
50
I C (mA)
100
VCE = 5 V; Tj = 25 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
handbook2, .h0alfpage
Cc
(pF)
1.6
1.2
MEA457
0.8
0.4
0
0
4
8
12
16
20
VCB (V)
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage; typical values.
handbook2, .h2alfpage
fT
(GHz)
1.8
MEA459
handbook,3h0alfpage
gain
(dB)
20
MEA455
1.4
1.0
0
25
I C (mA)
50
10
0
102
G UM
I S12 I 2
10 3
f (MHz)
104
VCE = 5 V; f = 500 MHz; Tj = 25 °C.
Fig.4 Transition frequency as a function of
collector current; typical values.
1997 Oct 28
IC = 30 mA; VCE = 5 V; Tamb = 25 °C.
Fig.5 Gain as a function of frequency;
typical values.
4
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