2SC4381 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4381 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25"C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 25mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 0.7A; IB= 0.07A
ICBO
Collector Cutoff Current
VCB=150V; IE=0
IEBO
Emitter Cutoff Current
VEB= 6V; IG= 0
hFE
DC Current Gain
lc=0.7A:VCE=10V
COB
Output Capacitance
|E=0; Vca=10V;f=1MHz
fr
Current-Gain—Bandwidth Product
IE=-0.2A; VCE=12V
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
lc=1A;lBi=-ls2=0.1A;
Vcc= 20V; RL= 20 n
2SC4381
MIN TYP. MAX UNIT
150
V
1.0
V
10
uA
10
uA
60
35
PF
15
MHz
1.0
us
3.0
us
1.5
ns
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