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TCET1100G(1999) 데이터 시트보기 (PDF) - Vishay Semiconductors

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TCET1100G
(Rev.:1999)
Vishay
Vishay Semiconductors Vishay
TCET1100G Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
TCET110.(G) up to TCET4100
Vishay Telefunken
Switching Characteristics
Parameter
Delay time
Rise time
Turn-on time
Storage time
Fall time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
W VS = 5 V, IC = 2 mA, RL = 100 (see figure 3)
W VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4)
Symbol Typ.
Unit
td
tr
ton
ts
tf
toff
ton
toff
3.0
3.0
6.0
0.3
4.7
5.0
9.0
10.0
ms
ms
ms
ms
ms
ms
ms
ms
IF IF
0
RG = 50 W
tp = 0.01
T
m tp = 50 s
95 10804
50 W
+5V
IC = 2 mA; adjusted through
input amplitude
100 W
Channel I
Channel II
Oscilloscope
RL = 1 MW
CL = 20 pF
Figure 3. Test circuit, non-saturated operation
0
IF
RG = 50 W
tp = 0.01
T
m tp = 50 s
IF = 10 mA
+5V
IC
95 10843
50 W
1 kW
Channel I
Channel II
Oscilloscope
RL > 1 MW
CL < 20 pF
Figure 4. Test circuit, saturated operation
IF
0
tp
IC
100%
90%
96 11698
t
10%
0
tr
td
t
ts
tf
ton
tp
td
tr
ton (= td + tr)
pulse duration
delay time
rise time
turn-on time
toff
ts
tf
toff (= ts + tf)
storage time
fall time
turn-off time
Figure 5. Switching times
www.vishay.de FaxBack +1-408-970-5600
6 (11)
Document Number 83503
Rev. A6, 08–Sep–99

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