TCET1100G 데이터 시트보기 (PDF) - Vishay Semiconductors
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TCET1100G Datasheet PDF : 9 Pages
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TCET1100, TCET1100G
Optocoupler, Phototransistor Output, Vishay Semiconductors
High Temperature
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
VCE = 5 V, IF = 1 mA
IC/IF
VCE = 5 V, IF = 5 mA
VCE = 5 V, IF = 10 mA
PART
TCET1101
TCET1101G
TCET1102
TCET1102G
TCET1103
TCET1103G
TCET1104
TCET1104G
TCET1100
TCET1100G
TCET1105
TCET1105G
TCET1106
TCET1106G
TCET1107
TCET1107G
TCET1108
TCET1108G
TCET1109
TCET1109G
TCET1101
TCET1101G
TCET1102
TCET1102G
TCET1103
TCET1103G
TCET1104
TCET1104G
SYMBOL
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
MIN.
13
22
34
56
50
50
100
80
130
200
40
63
100
160
TYP.
30
45
70
90
MAX.
600
150
300
160
260
400
80
125
200
320
UNIT
%
%
%
%
%
%
%
%
%
%
%
%
%
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
IF
130
mA
Power dissipation
COUPLER
Pdiss
265
mW
Rated impulse voltage
Safety temperature
VIOTM
Tsi
6
kV
150
°C
Note
According to DIN EN 60747-5-5 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, ttest = 1 s
Partial discharge test voltage -
lot test (sample test)
tTr = 60 s, ttest = 10 s,
(see figure 2)
Insulation resistance
VIO = 500 V
VIO = 500 V, Tamb = 100 °C
VIO = 500 V, Tamb = 150 °C
(construction test only)
SYMBOL
Vpd
VIOTM
Vpd
RIO
RIO
RIO
MIN.
1.6
6
1.3
1012
1011
109
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
Document Number: 83503
Rev. 2.3, 14-Oct-09
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
813
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