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TCET1100G 데이터 시트보기 (PDF) - Vishay Semiconductors

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TCET1100G Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
TCET1100, TCET1100G
Vishay Semiconductors Optocoupler, Phototransistor Output,
High Temperature
300
250
Phototransistor
Psi (mW)
200
150
100
50
IR-diode
Isi (mA)
0
0
94 9182
25 50 75 100 125 150
Tsi - Safety Temperature (°C)
Fig. 1 - Derating Diagram
VIOTM
VPd
VIOWM
VIORM
t1, t2 = 1 to 10 s
t3, t4 = 1 s
ttest = 10 s
tstres = 12 s
0
13930
t1
tTr = 60 s
t3 ttest t4
t2 t stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC 60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Delay time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-on time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Storage time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Fall time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω,
(see figure 3)
Turn-on time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
Turn-off time
VS = 5 V, IF = 10 mA, RL = 1 kΩ,
(see figure 4)
SYMBOL
td
tr
ton
ts
tf
toff
ton
toff
MIN.
TYP.
3
3
6
0.3
4.7
5
9
10
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
IF IF
0
R G = 50 Ω
tp
= 0.01
T
tp = 50 µs
95 10804
50 Ω
+5V
IC = 2 mA; adjusted through
input amplitude
Channel I
100 Ω
Channel II
Oscilloscope
R L = 1 MΩ
C L = 20 pF
Fig. 3 - Test Circuit, Non-Saturated Operation
IF IF = 10 mA
0
+5V
IC
RG = 50 Ω
tp
= 0.01
T
t p = 50 µs
95 10843
50 Ω
1 kΩ
Channel I
Channel II
Oscilloscope
RL 1 MΩ
CL 20 pF
Fig. 4 - Test Circuit, Saturated Operation
www.vishay.com
814
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83503
Rev. 2.3, 14-Oct-09

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