C3296 데이터 시트보기 (PDF) - New Jersey Semiconductor
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C3296 Datasheet PDF : 2 Pages
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^£.mL-donau.ctoi LPtoducti, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC3296
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR,CEO= 150V(Min)
• Complement to Type 2SA1304
APPLICATIONS
• Power amplifier applications.
• Vertical output applications.
I•<
i i '\
3
1.BASE
2. COLLECTOR
3.BV1ITTER
TO-220Fa package
•*-- 3
•* > 1
-* s - §—
l*'
ABSOLUTE MAXIMUM RATINGS(Ta=25"C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25°C
PC
Collector Power Dissipation
@TC=25"C
Tj
Junction Temperature
0.5
A
2
W
20
150
r
Tstg
Storage Temperature
-55-150 'C
A
u
1t
K
t
*
^
mm
DIM MIN
A 16.85
B 9.90
C 4.35
D 0.75
F 3.20
G 6,90
H 5.15
J 0.45
K 13.35
L 1,10
N 4.93
Q 4,85
R 2.95
S 2.70
U 1.75
u 1,30
MAX
17.15
10.10
4.SS
0.30
3.40
7.10
5.45
0,75
13.65
1.3,0
5.18
5.15
3,25
2.90
2.05
1.SO
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions uithout
notice, liirbrmnlion furnished by N.I Semi-Conductors is believed to he both accurate and reliable ill the time of yumi:
to press. Mi uses or. N.I Seini-Coiuluelors assumes no responsibility lor any errors or omissions discovered in its use.
X I Semi-C'oiiduflors eneoura»es ciistoiners to \erily (hat Jiitnshccl-; ;n-e ciinvnt before plaeiny orders.
Qualify Semi-Conductors
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